Field Effect Transistors
Agilent announces two additional members of its family of high-linearity E-pHEMT (enhancement-mode pseudomorphic high-electron-mobility transistor) FETs (field effect transistors) in 4.5 × 4.1 × 1.5 mm SOT-89 surface-mount packages. The ATF-52189 and ATF-53189 are designed for use in the transmitter power amplifiers and receiver low-noise amplifiers in cellular and PCS base stations, low-earth-orbit satellite systems, terrestrial multichannel multipoint distribution systems (MMDSs) and other communications applications operating from 450 MHz to 6 GHz. The 42 dBm third-order output intercept point (OIP3) at 2 GHz of the ATF-52189 results in an amplifier capable of handling a large number of voice and data channels. At 2 GHz, its other specifications include typical 27 dBm linear output power (P1dB), 16 dB gain and 55% power-added efficiency (PAE), combined with a 1.5 dB noise figure. Typical operating bias is 4.5 V at 200 mA. The ATF-53189 features a 0.85 dB noise figure, combined with a 40 dBm OIP3, 23 dBm P1dB, 15.5 dB gain and 46% PAE. Typical operating bias is 4.0 V at 135 mA.
Agilent Technologies Inc.
Agilent Technologies Inc.
Test and Measurement Group
5301 Stevens Creek Blvd.
Santa Clara, CA, 95051
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