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Hittite Microwave Corporation has introduced four new chip and SMT packaged pHEMT GaAs MMIC Low Noise Amplifiers (LNAs) which are well suited for automotive, broadband, military EW, microwave radio and SatCom applications from 5 to 18 GHz. The HMC902 and HMC903 are pHEMT GaAs MMIC Low Noise Amplifier chips which are rated from 5 to 10 GHz and 6 to 18 GHz, respectively. These high linearity LNAs deliver up to 20 dB gain and +28 dBm output IP3, with noise figure as low as 1.6 dB. The HMC902 and HMC903 occupy less than 1.5 mm2, feature DC blocked RF I/Os, and are internally matched to 50 Ohms making them appropriate for integration into multi-chip-modules (MCMs) and microwave integrated circuits (MICs). The HMC902LP3E and HMC903LP3E are SMT packaged pHEMT GaAs MMIC Low Noise Amplifiers which are rated from 5 to 10 GHz and 6 to 17 GHz, respectively. These high linearity LNAs deliver up to 19 dB gain and +28 dBm output IP3, with noise figure as low as 1.7 dB. The HMC902LP3E and HMC903LP3E are internally matched to 50 Ohms, are housed in RoHS compliant 3 x 3 mm plastic packages and feature DC blocked RF I/Os.

Hittite Microwave Corporation
http://www.hittite.com