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SAN JOSE, Calif. -- (BUSINESS WIRE) -- Cypress Semiconductor Corp. introduced the industry’s first radiation-hardened 72-MBit QDR II+ SRAMs. The new SRAMs employ Cypress’s patented RadStop™ technology, which enables uncompromised functionality in the face of radiation doses of up to 300 kRads. The radiation hardened QDRII+ SRAMs also deliver outstanding performance, with clock speeds up to 250 MHz and throughput up to 36 gigabits per second (Gbps). These memories enable Cypress to support additional aerospace and defense applications such as weapons systems and satellites.

The RadStop technology combines manufacturing process hardening and proprietary design techniques. The new devices with RadStop technology deliver single event latch-up and single event functional interrupt immunity at temperatures as high as 125 degrees Centigrade.

Cypress offers four configurations of the 72 Megabit QDR II+ with RadStop technology. They are available in both x18 and x36 bus widths, and with two- and four-word burst modes. All the devices are offered in 165-pin Ceramic Column Grid Array (CCGA) packages. The devices are manufactured in the Cypress FAB-4 facility, a Microelectronics Trusted Category 1A Fabrication facility, located in Bloomington, Minnesota, and are exclusively packaged and tested in the United States.

“The 72 megabit QDRII+ with Radstop technology is a game changing memory for radiation hardened applications. The size, weight, and power consumption benefits enable designers to maximize performance while significantly reducing board space,” said Walt Anderson, Senior Director of Cypress’s Aerospace and Defense Business Unit.

The four new devices are numbered as follows:

* CYRS1542AV18-250GCMB (x18, burst of 2)

* CYRS1543AV18-250GCMB (x18, burst of 4)

* CYRS1544AV18-250GCMB (x36, burst of 2)

* CYRS1545AV18-250GCMB (x36, burst of 4).

Samples are available now. Full production and QML-V qualification is expected in January, 2011.


Cypress Semiconductor