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Mimix Broadband introduces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two-stage, single ended, X-band high power amplifier, which integrates an on-chip gate bias circuit to simplify biasing. Using 0.5 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this device covers the 8.7 to 10.7 GHz frequency bands, delivers 40 dBm output power and offers 32 percent power added efficiency. The amplifier also has a typical large signal gain of 17 dB with good input and output match. This high power amplifier, identified as XP1007, is suited for radar and communications systems, primarily for military applications.
Mimix Broadband, Inc.

Mimix Broadband
www.mimixbroadband.com