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Mimix Broadband introduces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage buffer amplifier with ultra wide bandwidth and high dynamic range. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 18 to 38 GHz frequency bands and can operate at 3.5 or 5.5 V. This device can also be operated with all three stages biased in parallel or with independent bias for input and output stages, as required to optimize performance. This MMIC device has a small signal gain of 21 dB with a noise figure of 3.2 dB across the band. It also has 11 dBm OP1dB at low noise bias or can provide 15 dBm OP1dB at power bias. This amplifier, identified as XB1006, is an LO driver or buffer amplifier, and is suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS) and SATCOM.
Mimix Broadband, Inc.

Mimix Broadband
www.mimixbroadband.com