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RF Micro Devices releases its D10040200PH1 and D10040230PH1 gallium nitride (GaN) based CATV amplifier modules for use as power doubler amplifiers in current and next generation CATV infrastructure applications including line amplification and hybrid fiber coaxial (HFC) optical nodes. They feature gain of 20 dB and 23 dB, respectively, and they are said to be the first power doubler amplifier modules to use an ultra-linear, high-efficiency GaN process technology. By combining multiple compound semiconductor technologies in a highly integrated, hybrid amplifier module, designers are able to produce optimal performance across all critical multi-carrier distortion parameters while also increasing output power capability and efficiency. The standard SOT115J packaged amplifier modules provide design flexibility while maintaining the ease of use of a CATV infrastructure.

RF Micro Devices, Inc.
http://www.rfmd.com