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RF Micro Devices® announces two GaAs HBT pre-driver power amplifiers (PAs) for cellular basestation applications. The half-watt RF3807 and two-watt RF3809 single-stage devices operate across CDMA, GSM, DCS, PCS and UMTS frequencies. Operating in the UMTS frequency band, the RF3807 driver amplifier provides +28.5 dBm output power (OP1dB), high power efficiency (40% at OP1dB), high linearity (+42 dBm OIP3) and gain (14.5 dB) under linear operation. The RF3807 obtains – 60 dBc Adjacent Channel Power (ACPR) at power output (Pout) of +17 dBm (test condition: ACPR measured at 5 MHz offset, WCDMA modulation, 64 channel base station forward link). Operating in the UMTS frequency band, the RF3809 driver amplifier provides +33.5 dBm output power (OP1dB), high power efficiency (43% at OP1dB), high linearity (+43 dBm OIP3) and gain (10.5 dB) under linear operation. The RF3809 obtains – 60 dBc ACPR at Pout of +20 dBm (test condition: ACPR measured at 5 MHz offset, WCDMA modulation, 64 channel basestation forward link).

RF Micro Devices, Inc.

RF Micro Devices, Inc.
http://www.rfmd.com