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MOSFETs Deliver Fast Turn-on and Reduce Dynamic Power Losses for High-voltage Power Consumer and Industrial Applications

  PHOENIX, Ariz. – Feb. 11, 2010 - ON Semiconductor has expanded its market leading power switching product offering with the introduction of a high-voltage power MOSFET portfolio including 500V and 600V devices. These new solutions are designed for the robust needs of high voltage, energy conversion applications such as Power Factor Correction (PFC) and Pulse Width Modulation (PWM) stages, where faster turn-on and reduced dynamic power losses are crucial.

Specifically, they are suited for use in power adapters for gaming, printing and notebooks, as well as implementation in ATX power supplies, LCD panel power and industrial lighting ballast.

  The devices are single N-channel MOSFETs offering minimized power dissipation by delivering competitively low RDS(on). These devices employ planar stripe technology, allowing operation in the most demanding applications. Low gate charge reduces switching loss, which also enables higher power efficiency.

The avalanche energy ratings on these devices offer robust operation in power supply applications. Their impressive performance combines to enable the development of more efficient power subsystems.

  “This portfolio introduction is just the first step into the high-voltage power MOSFET market for ON Semiconductor,” said Paul Leonard, vice president and general manager of ON Semiconductor’s MOSFETs products division.

“We have strategically entered the high-voltage switching market at this time to better service our customers’ overall power management needs by providing a comprehensive selection of load switching solutions from 500V (part #NDD05N50Z-1G) to 600V (part #NDD02N60Z-1G.) Moving forward we will continue to expand our high-voltage power MOSFET portfolio with targeted solutions for consumer and industrial customers.


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