California Eastern Labs introduces the NESG303100G SiGe HBT chip from NEC for engineers whose designs can benefit from the use of die. The chip is produced using NEC’s 110 GHz fT silicon germanium processing technology. Suitable for both oscillator and LNA applications in 2.4 to 5.8 GHz mobile communications designs, specifications include high breakdown voltage of 5 V and hFE from 220 to 380.