Wireless Design & Development

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Simplify Spectrum/Signal Analyzer Selection with Five Key Considerations
How US Design Engineers Can Meet Global Legislation Challenges...
Using Next-Generation Non-Stationary Noise Suppression to Enhance...
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Other Items from Peregrine Semiconductor Corp.

180 nm Ultra CMOS Process
January 2011
SP6T All-Tx RF Switch Delivers Fully Symmetric Flexibility
October 2010
UltraCMOS RFIC Offers Cost-Optimized Solution for any Mode, any Band, any Path
September 2010
180 nm Ultra CMOS Process
June 2010
Exclusive Agreement Targets 180 nm UltraCMOS™ Process as Part of Long-Term SOS Roadmap
May 2010
Tiny RFIC Delivers +67 dBm IIP3 and Extends Portfolio of the "Green RFIC Solution"
April 2010
High linearity, Low Loss Mixer Designed for Broadband Applications
August 2009
UltraCMOS™ Digital Step Attenuators Feature Serial Addressability
Digitally Tunable Capacitors Enable High-performance RF tuning for GSM Cellular and Mobile TV
December 2008
DSA Line Features Serial-Addressable Control Interface
August 2008
Dual-SP4T Switch Has Eight High Power RF Ports
Antenna Tuning Switch Delivers IMD Performance of -110 dBm
April 2008
Devices Deliver Ultra-low Phase Noise
Multiple Switch IC
July 2007
Improving RF performance in Mixed-signal Circuits
January 2007
RF Switch
July 2006
RF Switches
February 2006
RF Switches
November 2005
Transmitter/Receiver
June 2005
RF Switch
February 2005
Direct Connect CMOS-based Antenna Switches
December 2004
RF Antenna Switch
November 2004
Integrating Ultra CMOS Designs in GSM Front Ends
September 2004
Cover Story Integrating Ultra CMOS Designs in GSM Front Ends
August 2004
Digital Step Attenuators
June 2004
CMOS Switch
May 2004
Featured Application CMOS-Based Digital Step Attenuator Designs
System on Chip Integration Using a True Silicon on Insulator Process
September 2001


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