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RIM Shares Dive To 9-Year Low, New Software May Not Stop Decline

June 26, 2012 4:07 am | Comments

June 26, 2012 (AP) — Shares of BlackBerry maker Research In Motion dove to a nine-year low Monday after Morgan Stanley downgraded the stock, saying RIM's challenges are piling up. Research In Motion Ltd.'s shares closed down 75 cents, or 7.7 percent, to $9.11 on the Nasdaq. The bottom for the day was $9.

T-Mobile To Buy, Swap Spectrum With Verizon

June 26, 2012 3:57 am | Comments

June 26, 2012 Peter Svensson, AP Verizon Wireless said it has agreed to sell some wireless spectrum rights to T-Mobile USA and swap others, in a continuing quest to get regulators to approve a bigger spectrum deal it has worked out with a consortium of cable companies and another wireless carrier.

Researchers Test Carbon Nanotube-based Ultra-low Voltage Integrated Circuits

June 25, 2012 10:39 am | Comments

A team of researchers from Peking University in Beijing, China, and Duke University in Durham, North Carolina, has demonstrated that carbon nanotube-based integrated circuits can work under a supply voltage much lower than that used in conventional silicon integrated circuits. Low supply voltage circuits produce less heat, which is a key limiting factor for increased circuit density.

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Nano-Sandwich Technique Slims Down Solar Cells, Improves Efficiency

June 25, 2012 10:25 am | Comments

Researchers from North Carolina State University have found a way to create much slimmer thin-film solar cells without sacrificing the cells’ ability to absorb solar energy. Making the cells thinner should significantly decrease manufacturing costs for the technology. “We were able to create solar cells using a ‘nanoscale sandwich’ design with an ultra-thin ‘active’ layer,” says Dr.

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Unraveling the Mysteries of Exotic Superconductors

June 25, 2012 10:22 am | Comments

In traditional electrical lines, a significant amount of energy is lost while the energy travels from its source to homes and businesses due to resistance. Superconductors, materials that when cooled have zero electric resistance, have the promise of someday increasing the efficiency of power distribution, but more must still be learned about superconductors before they can be widely used for that purpose.

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Until Next Year IMS, Au Revoir!

June 25, 2012 7:30 am | by Janine E. Mooney, Editor | Comments

IMS 2012 in Montreal caused quite a stir, in more ways than one. Exhibitors and attendees alike complained of extensive lines at customs, and some exhibitors even turned back after having issues getting their booth materials across the border. Those of us who did find our feet on Canadian land, perusing the exciting new products and technologies that lined the show floor were very happy with the outcome.

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FSW Signal and Spectrum Analyzer Offers Options for Analyzing IEEE 802.11ac WLAN Signals

June 25, 2012 6:47 am | Comments

The new IEEE 802.11ac WLAN standard will provide an unprecedented high data throughput of 1 Gbit/s and higher. It is still being defined, but developers who want to design chipsets and modules in line with IEEE 802.11ac today can now use the R&S FSW to analyze WLAN signals over the full bandwidth – with unparalleled accuracy.

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Teseq to Acquire IFI, Increasing its Presence in the RF Amplifier Market

June 25, 2012 6:38 am | Comments

Teseq, a leading developer and provider of instrumentation and systems for EMC emission and immunity testing, intends to acquire New York-based Instruments for Industry (IFI), a leading designer and manufacturer of solid state and traveling wave tube (TWT) amplifiers. By combining the competencies of IFI and the recently acquired MILMEGA with its own capabilities, Teseq will expand its expertise and broaden its product line in the RF amplifier market.

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8 GHz SP4T RF Switch for Test-and-Measurement/ATE Applications

June 25, 2012 6:32 am | Comments

Peregrine Semiconductor announced from booth # 2009 at the International Microwave Symposium (IMS2012) in Montreal, the SP4T PE42540 RF switch.  Designed on the latest UltraCMOS® process technology version, STeP5, the HaRP™ technology-enhanced PE42540 switch has a frequency range of 10 Hz to 8 GHz, with low insertion loss of 0.

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Circuit Material Solutions at 2012 IMS

June 25, 2012 6:15 am | Comments

Rogers Corporation and representatives of its Advanced Circuit Materials Division will be at the upcoming 2012 IEEE International Microwave Symposium (IMS) to help attendees learn more about Rogers’ wide range of high frequency circuit materials. The 2012 IEEE International Microwave Symposium ( www.

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New Family of GaN on SiC HEMT RF Transistors

June 25, 2012 5:49 am | Comments

Richardson RFPD announces immediate availability and full design support capabilities for a new family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency (RF) transistors from Microsemi Corporation (Microsemi). The common source GaN on SiC transistors are internally-matched for optimal performance and specifically designed for S-band radar applications, making them easier to design-in than unmatched broadband devices.

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TelExpress Announces Growth and Reinvestment Initiative

June 22, 2012 12:20 pm | Comments

Driven by a strong demand from their customers, TelExpress has approved a significant investment to update their infrastructure, including adding more sales professionals to their staff to service the customer more efficiently. “The timing is right for us” said Sherry Clinard, CEO.  “Our sales continue to grow, and with this growth we want to maintain the high level of service our customers are accustomed to.

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How Technology Is Speeding Up Humanitarian Response

June 19, 2012 2:54 pm | Comments

Amid discussions Tuesday of ways social media can be used to ensure a sustainable future for the planet, one Rio+Social conversation emphasized how technology is accelerating and improving humanitarian relief. Antonia Guterres, U.N. high commissioner for refugees, Hans Vestberg, CEO of Ericsson, and Ertharin Cousin, executive director of the World Food Programme discussed how their respective organizations use technology to address the world’s challenges, in a panel moderated by Robb Skinner, associate director of the U.

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GaN Matched Power Transistor Family Targets Pulsed-Radar Applications

June 19, 2012 10:13 am | Comments

RF Micro Devices, Inc. today announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies. RFMD’s RFHA1025 complements the recently released 380-watt RF3928B, the highest output power S-Band device in RFMD’s matched power transistor family.

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New USB 3.0 SuperSpeed Interface Board for Altera FPGAs

June 19, 2012 6:49 am | Comments

Cypress Semiconductor Corp. and Nuvation Research Corp. today announced the production release of a rapid-prototyping solution that simplifies streaming video, images and other data from Altera FPGAs to a host processor at speeds up to 400 Megabytes per second. This solution includes a SuperSpeed USB 3.

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