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Based on TurboFET™ technology, Vishay Intertechnology's 20V SiS426DN and SiR496DP and 30 V Si7718DN and Si7784DP N-channel power MOSFETs exhibit "on-resistance times gate charge" of 76.6 mW-nC at 4.5 V and 117.6 mW-nC at 10 V (20 V) and 112.34 mW-nC at 4.5 V and 180 mW-nC at 10 V (30 V). The 20 V units offer on-resistance of 5.8 mW at 4.5 V and 4.2 mW at 10 V and typical gate charge of 13.2 nC at 4.5 V and 28 nC at 10 V. The 30 V components exhibit on-resistance of 8.2 mW at 4.5 V and 6 mW at 10 V and typical gate charge of 13.7 nC at 4.5 V and 30 nC at 10 V. The halogen-free chips act as the high-side MOSFET in synchronous buck converters for notebook computers, voltage regulator modules (VRMs), servers, and other systems using point-of-load (POL) power conversion.


Vishay Intertechnology, Inc.
http://www.siliconix.com