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RFMD’s new RF3826 is a wideband Power Amplifier designed for continuous wave and pulsed applications such as wireless infrastructure, RADAR, two-way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input-matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.

Features
• Advanced GaN HEMT and Heat-Sink Technology
• Input Internally Matched to 50?
• Output Power of 9W
• 30MHz to 2500MHz Instantaneous Bandwidth
• Gain: 12dB
• Power Added Efficiency: 45% (30MHz to 2500MHz), 50% (200MHz to 1800MHz)
• Large Signal Models Available
• EAR99 Export Control

Applications
• Class AB Operation for Public Mobile Radio
• Test and Instrumentation
• Power Amplifier Stage for Commercial Wireless Infrastructure
• Civilian and Military Radar
• General Purpose Tx Amplification

For more information on RF3826, visit https://estore.rfmd.com/RFMD_Onlinestore/Products/RFMD+Parts/PID-P_RF3826.aspx.



Posted by Janine E. Mooney, Editor

November 1, 2011

Wireless Design & Development